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Metrology – MEB ZEISS ULTRA +

  TECHNICAL DESCRIPTION :

 

Resolution                                           

1.0nm @ 15kV, 1.7nm @ 1kV, 4.0 nm @ 0.1kV

 

 

Magnification                       12 - 1,000 kx in SE mode, 100 - 1,000 kx with EsB detector

Acceleration Voltage           2 kV - 30kV

 

Standard Detectors

EsB detector with filtering grid , (0 – 1500V) IntegratedAsB detector , High efficiency In-lens SE2 detector

 

 

 Specimen Stage

5-Axes Motorised  Eucentric Stage

X = 130mm

Y = 130mm

Z = 50mm

T = -3 to 70°

R = 360° (continuous)

 

Echantillon : Wafer jusqu'à 4 ”

Image Processing

Resolution: Up to 3072 x2304pixel , Noise reduction: Seven integration and averaging modes

 

 

EDX (XFlash® detector 5030)

 

 

 TECHNICAL DESCRIPTION

 

Energy resolution 127 eV at Mn Kα (54 eV C Kα, 64 eV F Kα), guaranteed up to 50,000 cps

Detection range from boron (5) to americium (95)

Maximum input count rate 750,000 cps

30 mm2 active detector area

Peltier cooling (neither liquid nitrogen nor water required for cooling)

 

Contact :

MEB : 1005

christophe.lemonias@cea.fr 

jean-luc.thomassin@cea.fr

Valentine.Bolcato@grenoble-inp.fr

MEB : BCAI

Valentine.Bolcato@grenoble-inp.fr

christophe.lemonias@cea.fr 

jean-luc.thomassin@cea.fr

 

PTA user information

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