ICP Etcher (Plasmalab100 from Oxford)

Technical description:

ICP plasma chamber: Inductively Coupled Plasma with RF excitation

- Plasma RF generator for the plasma (13.56 MHz and 0 to 1200 W) which controls the plasma properties

- Bias RF generator (13.56 MHz and 0 to 600 W) which controls the acceleration of the ions

- Available gases : HBr, Cl₂, SiCl₄, CF₄, CH₂F₂,SF₆, CHF₃, O₂, Ar, N₂, CH₄

- Chamber wall temperature : 40°C

Load-lock sytem with automatic transfer to the plasma chamber

Substrate holder : 

-  4" wafer (need a carrier wafer for smaller sample size)

- Cooling system : Mechanical clamping system withHe backside thermal contact

- Substrate holder temperature  from -80°C to 250°C

Endpoint detection system : Optical emission and Interferometry system (laser wave length of 600 nm)

Process capabilities:

This etching equipment is dedicated to the etching of semiconductor (Si, Ge…), oxide ( SiO2, HfO2, SiN…), III-V materials (InP, AsGa, GaN,..), metal (Ti, Ta…) an organic materials using halogen (Br, F, Cl) or oxygen based plasmas