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IBE etcher (scia Mill 150 from scia Systems)

Ion beam source :

 

Circular microwave ECR-source MW218-e

- ion energy range 50 – 2000 eV, (200 – 800 eV for 4’’ wafers)

- ion density (from 0.1 to 0.6 mA.cm-2)

IBE

- Ar gas

 

Substrate holder :

 

Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 160° in 0.1° steps

 

Neutralizer : Triple plasma bridge neutralizer N-3DC

 

Base pressure : < 1 x 10-6 mbar

 

Tool configuration : 1 process chamber, 1 load-lock

 

Sample size : from small sample to 4'' wafers

 

End point detection : Secondary Emission Ion Mass Spectrometer (SIMS) from Hiden analytical, SIMS HAL IMP 301/3F

 

 

Process capabilities

 

 IBE system can be used for many applications in the field of micro and nanotechnologies (spintronic, photonic,..).

 

The IBE system enables etching of many materials and multi layers stack:

- metal: Pt, Au, Ti, Ta...

- magnetic materials: Fe, Co, Ni, Pd...

- Piezoelecric materials: PZT, STO…

 

Usual etch rate for several materials : 21 nm/min for SiO2, from 25 to 80 nm/min for Au, from 20 to 60nm/min for Cu, 16 nm/min for Ti, 25 nm/min for Al, 80nm/min for Ag…   

 

 

Contact : john.pointet@grenoble-inp.fr, thomas.charvollin@cea.fr  

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