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Etching : Deep RIE SPTS (SPX HRM 180)

Technical description:

 

ICP plasma chamber: Inductively Coupled Plasma with RF excitation

- Plasma RF generator (13.56 MHz and 0 to 3000 W) which controls the properties of the plasma

- Bias RF generators (13.56 MHz from 0 to 300 W or 380 kHz from 0 to xx W) which controls the acceleration of the ions

- Available gases : SF6, C4F8, O2, Ar

- Chamber wall temperature 100°C

 

Load-lock sytem with automatic transfer to the plasma chamber

Substrate holder : 

-  4" wafer (need a carrier wafer for smaller sample size)

- Cooling system : mechanical clamping system withHe backside thermal contact

- Substrate holder temperature from -10°C to 20°C

 

Process capabilities:

Deep silicon etching (etch rate > 4.5µm.min-1) using the BOSCH process TM (etch depth from 5µm to 750 µm)

Diamond etching capabilities


DRIE

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Contact : stephane.litaudon@grenoble-inp.fr

PTA user information

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