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HDRF Stripper (DSB9000M from Plasma-Therm)

Technical description :

 

DSB9000M

Stripper with HDRF® technology for removal of organic layers (photoresists, polymers, residues…)

 

HDRF® ICP plasmasource

4 gas lines : O2, N2, CF4, H2O vapor system

Plasma power from 150 W to 3 kW

Chamber pressure : 0.2 to 2 Torr

 

Substrate holder temperature : from 80°C to 250°C

 

Size and type of samples : from small samples to 8 inches wafers, possibility of double-side batch stripping (25 wafers)

 

Endpoint detection with spectrophotometer

 

 

Process capabilities :

 

process_DSB9000M

Fast photoresist stripping

 

Bosch polymer removal after DRIE in complex 3D structure

Low temperature release of organic sacrificial layers

Organic residues removal

Damage-free for sensitive devices

 

High strip rate up to 2 µm/min

 

 

 

Contact : john.pointet@grenoble-inp.fr

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