HDRF Stripper (DSB9000M from Plasma-Therm)

Technical description :

Stripper with HDRF® technology for removal of organic layers (photoresists, polymers, residues…)

HDRF® ICP plasmasource

4 gas lines : O₂, N₂, CF₄, H₂O vapor system

Plasma power from 150 W to 3 kW

Chamber pressure : 0.2 to 2 Torr

Substrate holder temperature : from 80°C to 250°C

Size and type of samples : from small samples to 8 inches wafers, possibility of double-side batch stripping (25 wafers)

Endpoint detection with spectrophotometer

Process capabilities :

Fast photoresist stripping

Bosch polymer removal after DRIE in complex 3D structure

Low temperature release of organic sacrificial layers

Organic residues removal

Damage-free for sensitive devices

High strip rate up to 2 µm/min