Etching : ICP STS (STS multiplex from SPTS)

Technical description:

ICP plasma chamber: Inductively Coupled Plasma with RF excitation

- Plasma RF generator for the plasma (13.56 MHz and 0 to 1200 W) which controls the density of the ions

- Bias RF generator (13.56 MHz and 0 to 300 W) which controls the acceleration of the ions

- Available gases : SF₆, CHF₃, O₂, Ar

- Chamber wall temperature 40°C

Load-lock sytem with automatic transfer to the plasma chamber

Substrate holder : 

-  4" wafer (need a carrier wafer for smaller sample size)

- Cooling system : Electrostatic clamping system withHe backside thermal contact

- Substrate holder temperature  of 20°C

Endpoint detection system : Interferometry system from Jobin Yvon (laser wave length of 900 nm)

Process capabilities:

This etching equipment is dedicated to plasmas with fluoride gases (SF₆ and CHF₃), in particular adapted to the etching of semiconductor (Si, Ge…) and oxide ( SiO_2, SiN…), and some metal (Ti, Ta…). Available gases for processes are among 5: argon (Ar), oxygen (O₂), nitrogen (N₂), hexafluorure of sulfur (SF₆) and trifluorométhane. (CHF₃).