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Etching : ICP STS (STS multiplex from SPTS)

Technical description:


ICP plasma chamber: Inductively Coupled Plasma with RF excitation

- Plasma RF generator for the plasma (13.56 MHz and 0 to 1200 W) which controls the density of the ions

- Bias RF generator (13.56 MHz and 0 to 300 W) which controls the acceleration of the ions

- Available gases : SF6, CHF3, O2, Ar

- Chamber wall temperature 40°C

Etching STS multiplex photo 01


Load-lock sytem with automatic transfer to the plasma chamber


Substrate holder : 

-  4" wafer (need a carrier wafer for smaller sample size)

- Cooling system : Electrostatic clamping system withHe backside thermal contact

- Substrate holder temperature  of 20°C


Endpoint detection system : Interferometry system from Jobin Yvon (laser wave length of 900 nm)


Process capabilities:


This etching equipment is dedicated to plasmas with fluoride gases (SF6 and CHF3), in particular adapted to the etching of semiconductor (Si, Ge…) and oxide ( SiO2, SiN…), and some metal (Ti, Ta…). Available gases for processes are among 5: argon (Ar), oxygen (O2), nitrogen (N2), hexafluorure of sulfur (SF6) and trifluorométhane. (CHF3).


Etching STS multiplex photo 03 Etching STS multiplex photo 02







PTA user information

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