Etching : Deep RIE SPTS (SPX HRM 180)

Technical description:

ICP plasma chamber: Inductively Coupled Plasma with RF excitation

- Plasma RF generator (13.56 MHz and 0 to 3000 W) which controls the properties of the plasma

- Bias RF generators (13.56 MHz from 0 to 300 W or 380 kHz from 0 to xx W) which controls the acceleration of the ions

- Available gases : SF₆, C₄F₈, O₂, Ar

- Chamber wall temperature 100°C

Load-lock sytem with automatic transfer to the plasma chamber

Substrate holder : 

-  4" wafer (need a carrier wafer for smaller sample size)

- Cooling system : mechanical clamping system withHe backside thermal contact

- Substrate holder temperature from -10°C to 20°C

Process capabilities:

Deep silicon etching (etch rate > 4.5µm.min^-1) using the BOSCH process ^TM (etch depth from 5µm to 750 µm)

Diamond etching capabilities