PVD CT100 Alliance Concept

Technical description :

Two-chamber sputtering system with manual loading, each chamber comprising 4 targets

Ar plasma with DC, RF and pulsed-DC generators.

Plasma power from 50W to 1 kW

Deposition temperature : ambient

Size and type of samples : from small samples to 4 inches wafers (transparent, metal and semiconductor sample)

Possibility of static or dynamic deposition with rotating substrate holder

Process capabilities :

Chamber 1 (DC) : Al, Cr, Ti, Nb, Ta + N₂ line for reactive sputtering (TiN, NbN, AlN)

Chamber 2 (RF and pulsed-DC generators) : SiO₂, Si₃N₄, ITO, NiFe (81/19 and 36/64)+ N₂ and O₂ lines

Deposition rate : from 15 nm/min to 250nm/min

Thickness range : from 20nm to 1µm

PTA user information

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