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PVD CT100 Alliance Concept

PVDTechnical description :


Two-chamber sputtering system with manual loading, each chamber comprising 4 targets


Ar plasma with DC, RF and pulsed-DC generators.


Plasma power from 50W to 1 kW


Deposition temperature : ambient


Size and type of samples : from small samples to 4 inches wafers (transparent, metal and semiconductor sample)


Possibility of static or dynamic deposition with rotating substrate holder




Process capabilities :


Chamber 1 (DC) : Al, Cr, Ti, Nb, Ta + N2 line for reactive sputtering (TiN, NbN, AlN)

Chamber 2 (RF and pulsed-DC generators) : SiO2, Si3N4, ITO, NiFe (81/19 and 36/64)+ N2 and O2 lines 

Deposition rate : from 15 nm/min to 250nm/min

Thickness range : from 20nm to 1µm


Resp. Valentine BOLCATO valentine.bolcato@grenoble-inp.fr

         Christelle GOMEZ christelle.gomez@grenoble-inp.fr

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