Atomic Layer Deposition (ALD) : Fiji 200 from Ultratech

Technical description:

Deposition of thin and conformal layers which can be assisted by an ICP remote plasma (O2, N2 and H2)

Deposition pressure : in the range of several hundreds millitorr

Deposition temperature : from 80°C to 300°C

Single wafer transfer chamber under vacuum (automatic transfer)

Sample size : from sample to 8 inches wafers

Process capabilities:

Available materials : HfO₂ (TEMAH), Al₂O₃ (TMA), TiN (TDMAT), TiO₂ (TDMAT), ZnO (DEZ) et AZO (DEZ et TMA)

Deposition rate  : in the range of 1 Å per cycle (cycle time from 20s to 120s)

Very good conformity at the top and bottom in patterns with high aspect ratio

Multi-layers Al2O3 / TiO2 : Johannes Goupy, Neel Institut : structure a blocage de phonons pour détecteurs à inductance cinétique

Contact : Corinne Perret corinne.perret@cea.fr

              Guillaume Gay guillaume.gay@cea.fr