ICPCVD Sentech SI500D

This equipment is dedicated to the deposition of silicon oxide (SiOx), silicon nitride (SiNx), and amorphous silicon (a-Si) layers. The accessible thicknesses range from 10 nm to several micrometers.

The system consists of a loading lock and the deposition chamber. The substrate holder is compatible with 8", 4", and 2" wafers, and small samples can be processed by attaching them to a carrier plate. The substrate holder temperature is adjustable (20 °C to 300 °C), and clamping is mechanical.

Eight gases are available for the processes: Silane (SiH₄), Ammonia (NH₃), Helium (He), Argon (Ar), Nitrogen (N₂), Hydrogen (H₂), Oxygen (O₂), and Carbon Tetrafluoride (CF₄). All gases are stored outside the building in the MDB9 module.

The chamber is an ICP type (Inductively Coupled Plasma): a first 1200 W RF generator (Radio Frequency: 13.56 MHz) generates the plasma through inductive coupling, while a second 300 W RF generator biases the plasma through capacitive coupling. A Class II laser interferometric system (P ≤ 1 mW, 660–680 nm) allows monitoring of the deposition during the process. The laser hits the sample surface through a window located on the chamber lid. A video camera coupled to the laser provides visualization of the measurement area.