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PECVD tool : CORIAL D250L

PECVD CorialTECHNICAL DESCRIPTION:

 

Oxide silicon, nitride silicon and amorphous depositions

 

Temperature deposition : 280°C

 

Gaz used : 

 

Size and type of samples : from 5 cm² to 8 inches wafers (transparent, metal and semiconductor sample)

 

 

 

 

PROCESS CAPABILITIES:

 

Gaz used 

  • SiO2 : SiH4 / N2O / Ar
  • SiN : SiH4 / N2 / NH3 / Ar
  • a-Si : SiH4 / Ar
  • clean : SF6 / N2O

 

Thickness range : from 50 nm to 2µm

 

 

Deposition rate range : from 1 nm/sec to 4.5 nm/sec

 

 

 

Silicon oxyde and silicon nitride made by PECVD

 

Contact:delphine.constantin@grenoble-inp.fr

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