PECVD tool : CORIAL D250L

TECHNICAL DESCRIPTION:

PECVD system is a tool for silicon oxide, silicon nitride and amorphous silicon deposition.

Deposition temperature : 280°C

Size and type of samples : from 5 cm² to 8 inches wafers (transparent, metal and semiconductor sample)

PROCESS CAPABILITIES:

Gaz used :

• SiO₂ : SiH₄ / N₂O / Ar
• SiN : SiH₄ / N₂ / NH₃ / Ar
• a-Si : SiH₄ / Ar
• clean : SF₆ / N₂O

Thickness range : from 50 nm to 2µm

Deposition rate range : from 1 nm/sec to 4.5 nm/sec

Contact : delphine.constantin@grenoble-inp.fr

               corinne.perret@cea.fr