PVD CT100 Alliance Concept
Technical description :
Two-chamber sputtering system with manual loading, each chamber comprising 4 targets
Ar plasma with DC voltage for metals deposition and RF voltage for insulating materials deposition
Plasma power from 100 W to 1 kW
Deposition temperature : ambient
Size and type of samples : from small samples to 4 inches wafers (transparent, metal and semiconductor sample)
Possibility of static or dynamic deposition with rotating substrate holder
Process capabilities :
Chamber 1 (DC) : Al, Cr, Ti, Nb, Ta + N2 line for reactive sputtering (TiN, NbN, AlN)
Chamber 2 (RF and DC generators) : SiO2, Si3N4, ITO, NiFe (81/19 and 36/64) + N2 and O2 lines
Deposition rate : from 15 nm/min to 250nm/min
Thickness range : from 20nm to 1µm
Resp. Valentine BOLCATO valentine.bolcato@grenoble-inp.fr
Christelle GOMEZ christelle.gomez@grenoble-inp.fr