LPCVD Tempress

TECHNICAL DESCRIPTION:

Nitride silicon and polysilicon depositions

Temperature deposition : 600°C – 850°C

Pressure range : 150 mTorr

Gaz used : siliane, dichlorosilane, phosphine-silane mix, ammoniac.

Size and type of samples : 2inches and 4 inches bare silicon wafers only

 Batch of 20 wafers can be processed in one run

PROCESS CAPABILITIES:

Gaz used :

• SiN : NH3 (amoniac), DCS (dichlorosilane)
• polysilicon  : doped or non doped : SiH4/PH3 1% (silane/phosphine) or SiH4 (silane)

Thickness range : from 50 nm to 100 nm

Deposition rate range : ~5nm/min, regarding temperature and gaz flow

Process capabilities

One of this stack is dedicated to silicon polycristallin deposition, undoped or phosphorus doped.

The other stack is made for nitride silicon, low stress or stoechimetric.

Polysilicon process

Contact: delphine.constantin@grenoble-inp.fr