Lithography – Mask aligner : MJB4

TECHNICAL DESCRIPTION

• Contact optical lithography for small sample to 4 inches wafer

• 3 exposure modes:
  • Soft contact : Mechanical pressure (resolution of 2.0 μm)
  • Hard contact : Mechanical pressure + wafer is pushed harder against the mask (in the range of 1 μm resolution)
  • Vaccum contact : vacuum contact processes yields considerably higher resolution

• Lampe UV (365 nm filtered at 6 mW/cm²)

• Lampe DUV (240 nm filtered at 4 mW/cm²)

• All substrat accepted , Any type of material accepted

• 4 or 5 inches masks 

• Alignment accuracy :
  • 2 µm

PROCESS CAPABILITIES

Main UV photoresit used (down to 0.8µm resolution)

• Positive : AZ1512HS – AZ4562 – AZ5214E

• Négative : AZ5214E – SU8-2005 – SU8-2025

Main DUV photoresit used (down to 0.5µm resolution)

• Positive : UV5 – AZTX1311

• Négative : MAN2403 – MAN2410 – NEB22AZ