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Lithography – Mask aligner : MJB4

TECHNICAL DESCRIPTION

 

Litho Mjb4 photo 01

  • Contact optical lithography for small sample to 4 inches wafer

 

  • 3 exposure modes:
    • Soft contact : Mechanical pressure (resolution of 2.0 μm)
    • Hard contact : Mechanical pressure + wafer is pushed harder against the mask (in the range of 1 μm resolution)
    • Vaccum contact : vacuum contact processes yields considerably higher resolution

 

  • Lampe UV (365 nm filtered at 6 mW/cm²)

 

  • Lampe DUV (240 nm filtered at 4 mW/cm²)

 

  • All substrat accepted , Any type of material accepted

 

  • 4 or 5 inches masks 

 

  • Alignment accuracy :
    • 1µm

 

 

 

 

 

PROCESS CAPABILITIES

 

 

Litho Mjb4 photo 03 croixMain UV photoresit used (down to 0.8µm resolution)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Litho Mjb4 photo 04 lor

 

Main DUV photoresit used (down to 0.5µm resolution)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Contact :

christophe.lemonias@cea.fr 

jean-luc.thomassin@cea.fr

nicolas.chaix@cea.fr

PTA user information

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