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Etching : CMP Alpsitec (E460C from Alpsitec)

Technical description:

 

Surface polishing and surface planarization

 

Sample size : 2" wafer and 4” wafer or sample 10x10mm2 (specific carrier wafer or sample)

 

Manual control of  recipe parameters

 

Manual substrate loading

photo_CMP

 

 

 

Process capabilities:

 

Polishing or planirization of oxide (SiO2,SiN,..) or metal (Al,..) with specific slurries

 

 

 

Contact: thierry.chevolleau@cea.fr

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