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Etching : CMP Alpsitec (E460C from Alpsitec)

Technical description:


Surface polishing and surface planarization


Sample size : 2" wafer and 4” wafer or sample 10x10mm2 (specific carrier wafer or sample)


Manual control of  recipe parameters


Manual substrate loading





Process capabilities:


Polishing or planirization of oxide (SiO2,SiN,..) or metal (Al,..) with specific slurries




Contact: thierry.chevolleau@cea.fr

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