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PVD CT100 Alliance Concept

PVDTechnical description :

 

Two-chamber sputtering system with manual loading, each chamber comprising 4 targets

 

Ar plasma with DC voltage for metals deposition and RF voltage for insulating materials deposition

 

Plasma power from 100 W to 1 kW

 

Deposition temperature : ambient

 

Size and type of samples : from small samples to 4 inches wafers (transparent, metal and semiconductor sample)

 

Possibility of static or dynamic deposition with rotating substrate holder

 

 

 

Process capabilities :

 

Chamber 1 (DC) : Al, Cr, Ti, Nb, Ta + N2 line for reactive sputtering (TiN, NbN, AlN)

Chamber 2 (RF and DC generators) : SiO2, Si3N4, ITO, FeNi + N2 and O2 lines 

Deposition rate : from 15 nm/min to 250nm/min

Thickness range : from 20nm to 1µm

 

Resp. Valentine BOLCATO valentine.bolcato@grenoble-inp.fr

CoResp : Guillaume GAY guillaume.gay@cea.fr

Information aux utilisateurs de la PTA

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