Lithography – Mask aligner : MA8 (bottom and top sides)

TECHNICAL DESCRIPTION

• Contact optical lithography for 2, 4, 6 and 8 inches wafer.

• 4 exposure modes:
o Proximity
o Soft contact : Mechanical pressure
o Hard contact : Mechanical pressure + wafer is pushed harder against the mask
o Vacuum contact : vacuum contact processes yields considerably higher resolution

• Lampe UV Hg, puissance 1000W:
o H-line [λ=405 nm] Þ 40 mW/cm² ;
o I-line [λ=365 nm] Þ 19 mW/cm².

• Mask sizes : 3 to 9’’.
• All substrat accepted

• Alignment accuracy :
o <1µm backside
o 0,5µm topside with manual alignment
o 0,25µm topside with assisted alignment


PROCESS CAPABILITIES
Main UV photoresit used:

• Positive : AZ1512HS – AZ4562 – AZ5214E
• Négative : AZ40XT – SU8-2005 – SU8-2025

Contact : christelle.gomez@grenoble-inp.fr