En | Fr

Your technological partner

From proof of concept to small production

Home  Facilities  

Etching : Deep RIE SPTS (SPX HRM 180)

Technical description:

 

ICP plasma chamber: Inductively Coupled Plasma with RF excitation

- Plasma RF generator (13.56 MHz and 0 to 3000 W) which controls the properties of the plasma

- Bias RF generators (13.56 MHz from 0 to 300 W or 380 kHz from 0 to xx W) which controls the acceleration of the ions

- Available gases : SF6, C4F8, O2, Ar

- Chamber wall temperature 100°C

 

Load-lock sytem with automatic transfer to the plasma chamber

Substrate holder : 

-  4" wafer (need a carrier wafer for smaller sample size)

- Cooling system : mechanical clamping system withHe backside thermal contact

- Substrate holder temperature from -10°C to 20°C

 

Process capabilities:

Deep silicon etching (etch rate > 4.5µm.min-1) using the BOSCH process TM (etch depth from 5µm to 750 µm)

Diamond etching capabilities


DRIE

Image1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PTA user information

To get full information on that facilitie, connect to user area