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Lithography – Mask aligner : MA 150 (bottom and top sides)

TECHNICAL DESCRIPTION

 

Litho MA150 photo 01

  • Contact optical lithography for 4 inches wafer only , Thickness between 250 µm et 1000µm

 

  • 3 exposure modes:
    • Soft contact : Mechanical pressure (resolution of 2.0 μm)
    • Hard contact : Mechanical pressure + wafer is pushed harder against the mask (in the range of 1 μm resolution)
    • Vaccum contact : vacuum contact processes yields considerably higher resolution

 

  • Lampe UV, puissance 350 W, no filter :

    • H-line [λ=405 nm]     Þ 20 mW/cm² ;
    • I-line [λ=365 nm]      Þ 8.0 mW/cm².

 

  • 5 inches masks 

 

  • All substrat accepted

 

  • Alignment accuracy :
    • 1µm (top or/and backside)

 

 

PROCESS CAPABILITIES

Main UV photoresit used (down to 1,2 µm resolution)

 

 

 

 

Contact : 

martine.gri@imep.grenoble-inp.fr

nicolas.chaix@cea.fr

 

 

PTA user information

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